Korean researcher hopes to build ferroelectric RAM

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If you’ve fantasized about how wonderful your life could be if the merits of DRAM, SRAM and Flash memory could all be mixed harmoniously into one “dream semiconductor,” listen up. You may not be up to speed on all the advancements in ferroelectric materials, but we’re pretty sure even the technological newbie could appreciate a new discovery by Korean researcher Dr. Shin Young-han. Reportedly, this fellow has “succeeded in figuring out the operational mechanism of ferroelectrics,” which could potentially lead to FeRAM — a technology that could “store data ten times faster than Flash memory and keep it for longer than ten years.” Kudos to you, Dr. Shin, now let’s get this stuff on the production line, shall we?

[Image courtesy of Ferra]


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